JY05M

1

JY05M

N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The product utilizes the latest trench processing techniques to achieve the high cell

density and reduces the on-resistance with high repetitive avalanche rating. These

features combine to make this design an extremely efficient and reliable device for

use in power switching application and a wide variety of other applications.

FEATURES

● 100V/30A, RDS(ON) =30mΩ@VGS=10V

● Fast switching and reverse body recovery

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

APPLICATIONS

● Power Switching application

● Hard switched and high frequency circuits

● Boost for LED Backlight

PIN DESCRIPTION