JY09M

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JY09M

N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The JY09 M utilizes the latest trench processing techniques to achieve the hi gh cell

density and reduces the on-resistance with low gate charge. These features combine

to make this design an extremely efficient and reliable device for use in pow er

switching application and a wide variety of other applications.

FEATURES

● 70V/90A, RDS(ON) ≤6.8mΩ@VGS=10V

● Fast switching and reverse body recovery

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

APPLICATIONS

● Power Switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

PIN DESCRIPTION