JY21H

High and Low side driver

1

General Description

The product is a high voltage, high speed power MOSFET and IGBT driver based on

P-SUB P-EPI process. The floating channel driver can be used to drive two N -channel

power MOSFET or IGBT independently which operates up to 600V. Logic inputs are

compatible with standard CMOS or LSTTL output, down to 3.3V logic . The output

drivers feature a high pulse current buffer stage designed for minimum driver cross

conduction. Propagation delays are matched to simplify use in high frequency

applications.

Features

● 3.3V logic compatible

● Fully operational to +600V

● Floating channel designed for bootstrap operation

● dV/dt Immunity ±50V/nsec

● Gate drive supply range from 10V to 20V

● UVLO for low side channel

● Output Source/Sink current capability 300mA/600mA