JY2605M

1

JY2605M

Dual N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The product utilizes the latest trench processing techniques to achieve the high cell

density and reduces the on-resistance with low gate charge. These features combine

to make this design an extremely efficient and reliable device for use in power

switching application and a wide variety of other applications.

FEATURES

● 60V/50A, RDS(ON)=14mΩ@VGS=10V(typical)

● Fast switching and reverse body recovery

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

APPLICATIONS

● Power Switching application

● Synchronous rectification

● Motor drive for 12V-24V Systems

PIN DESCRIPTION