JY8N5M

1

JY8N5M

N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The product utilizes the advanced planar processing techniques to achieve the high

cell density and reduces the on-resistance with high repetitive avalanche rating.

These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other

applications.

FEATURES

● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)

●Fast switching and reverse body recovery

● Excellent package for good heat dissipation

APPLICATIONS

● Lighting

● High efficiency switch mode power supplies

PIN DESCRIPTION

2